2SK0198 FET Datasheet

2SK0198 Datasheet, PDF, Equivalent


Part Number

2SK0198

Description

Silicon N-Channel Junction FET

Manufacture

Panasonic Semiconductor

Total Page 3 Pages
Datasheet
Download 2SK0198 Datasheet


2SK0198
Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
s Features
q High mutual conductance gm
q Low noise type
q Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
VDSX
VGDO
ID
IG
PD
Tch
Tstg
30
30
20
10
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.40+–00..0150
3
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Unit: mm
0.16+–00..0160
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol (Example): 1O
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS*
VDS = 10 V, VGS = 0
0.5 12 mA
Gate to Source leakage current IGSS
VGS = −30 V, VDS = 0
100
nA
Gate to Source cut-off voltage VGSC
VDS = 10 V, ID = 10 µA
0.1
1.5 V
Mutual conductance
gm
VDS = 10 V, ID = 0.5 mA, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 kHz
4
13
mS
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
Noise figure
NV
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 30 V, ID = 1 mA, GV = 80 dB
Rg = 100 k, Function = FLAT
14
3.5
60
pF
pF
mV
* IDSS rank classification
Runk
P
IDSS (mA)
Marking Symbol
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Publication date: January 2002
Note) The part number in the parenthesis shows conventional part number.
SJF00006BED
1

2SK0198
2SK0198
PD Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
gm VGS
20
VDS = 10 V
Ta = 25°C
16
12
8
IDSS = 5.0 mA
4
2.0 mA
0
0.8
0.6
0.4
0.2
0
Gate to source voltage VGS (V)
Crss VDS
5
VGS = −3 V
f = 1 MHz
Ta = 25°C
4
3
2
1
0
1 3 10 30 100
Drain to source voltage VDS (V)
ID VDS
8
Ta = 25°C
7
6
VGS = 0 V
5
4
0.1 V
3
0.2 V
2
0.3 V
1
0.4 V
0
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
gm ID
20
VDS = 10 V
IDSS = 5.0 mA Ta = 25°C
16
12
2.0 mA
8
4
0
012345678
Drain current ID (mA)
NF f
12
VDS = 10 V
ID = 5.2 mA
10 Ta = 25°C
8
6
Rg = 500
4
2
1 k
0
1 10 102 103 105
Frequency f (Hz)
ID VGS
9.6
VDS = 10 V
8.0
6.4
4.8
3.2
Ta = 75°C
1.6 25°C
25°C
0
1.0 0.8 0.6 0.4 0.2
0
Gate to source voltage VGS (V)
Ciss, Coss VDS
10
f = 1 MHz
VGS = −3 V
Ta = 25°C
8
6
Ciss
4
Coss
2
0
1
3
10 30
100
Drain to source voltage VDS (V)
2 SJF00006BED


Features Silicon Junction FETs (Small Signal) 2S K0198 (2SK198) Silicon N-Channel Juncti on FET For low-frequency amplification 0.40+0.10 –0.05 Unit: mm 0.16+0.10 0.06 s Features q High mutual conduc tance gm q Low noise type q Mini-type p ackage, allowing downsizing of the sets and automatic insertion through the ta pe/magazine packing. 3 1.50+0.25 –0 .05 2.8+0.2 –0.3 1 2 (0.95) (0.95 ) 1.9±0.1 2.90+0.20 –0.05 10˚ 1.1+ 0.2 –0.1 Drain to Source voltage Gat e to Drain voltage Drain current Gate c urrent Allowable power dissipation Chan nel temperature Storage temperature VD SX VGDO ID IG PD Tch Tstg 30 −30 20 10 150 150 −55 to +150 V V mA mA mW °C °C 1: Source 2: Drain 3: Gate 0 t o 0.1 Parameter Symbol Ratings Unit 1.1+0.3 –0.1 s Absolute Maximum Ra tings (Ta = 25°C) (0.65) JEDEC: TO-2 36 EIAJ: SC-59 Mini3-G1 Package Markin g Symbol (Example): 1O s Electrical Ch aracteristics (Ta = 25°C) Parameter Dr ain to Source cut-off current Gate to Source leakage current Gate to Source cut-off vol.
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