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BSP308 Dataheets PDF



Part Number BSP308
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Sipmos(r) Small-signal-transistor
Datasheet BSP308 DatasheetBSP308 Datasheet (PDF)

w at • N-Channel .D w • Enhancement mode w • Logic Level Features • dv/dt rated SIPMOS ® Small-Signal-Transistor Product Summary Drain source voltage Continuous drain current h S a ee U 4 t m o .c Preliminary data BSP308 VDS ID 4 30 0.05 4.7 V Ω A Drain-Source on-state resistance RDS(on) Type BSP308 Package SOT-223 Ordering Code Q67000-S4011 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current T A = 25 °C T A = 70 °C Pulsed drain cu.

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w at • N-Channel .D w • Enhancement mode w • Logic Level Features • dv/dt rated SIPMOS ® Small-Signal-Transistor Product Summary Drain source voltage Continuous drain current h S a ee U 4 t m o .c Preliminary data BSP308 VDS ID 4 30 0.05 4.7 V Ω A Drain-Source on-state resistance RDS(on) Type BSP308 Package SOT-223 Ordering Code Q67000-S4011 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current T A = 25 °C T A = 70 °C Pulsed drain current T A = 25 °C Reverse diode dv/dt I S = 4.7 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation w w w t a .D S a e h ID U 4 t e .c G m o 2 1 3 VPS05163 Pin 1 Pin 2/4 D PIN 3 S Value 4.7 3.9 Unit A ID puls dv/dt 18.8 6 kV/µs VGS Ptot Tj , Tstg ±20 1.8 -55...+150 55/150/56 V T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 w w w .D a S a t e e h m o c . °C U 4 t W 1999-09-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. - BSP308 Unit max. 25 110 70 K/W K/W RthJS RthJA - Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 1.6 max. 2 µA 0.1 10 10 0.05 0.03 1 100 100 0.075 0.05 nA Ω Ω V Unit V(BR)DSS VGS(th) IDSS 30 1.2 VGS = 0 V, I D = 250 µA Gate threshold voltage, VGS = VDS I D = 20 µA Zero gate voltage drain current VDS = 30 V, V GS = 0 V, Tj = 25 °C VDS = 30 V, V GS = 0 V, Tj = 125 °C Gate-source leakage current IGSS RDS(on) RDS(on) - VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 3.9 A Drain-Source on-state resistance VGS = 10 V, I D = 4.7 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-09-22 Preliminary data Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Transconductance typ. BSP308 Unit max. gfs Ciss Coss Crss td(on) 6.1 - 8.8 400 160 70 16 500 200 90 24 S pF VDS≥2*I D*RDS(on)max , ID = 3.9 A Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω Rise time tr - 30 45 VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω Turn-off delay time td(off) - 16 24 VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω Fall time tf - 15 23 VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω Page 3 1999-09-22 Preliminary data Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Gate to source charge typ. BSP308 Unit max. Qgs Qgd Qg V(plateau) - 1.9 5.4 14.5 3.1 2.9 8.1 22 - nC VDD = 24 V, ID = 4.7 A Gate to drain charge VDD = 24 V, ID = 4.7 A Gate charge total VDD = 24 V, ID = 4.7 A, VGS = 0 to 10 V Gate plateau voltage V VDD = 24 V , I D = 4.7 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. 0.84 38.4 22.3 max. 4.7 18.8 1.1 57.6 33.5 Unit IS ISM VSD trr Qrr - A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage V ns nC VGS = 0 V, I F = 4.7 A Reverse recovery time VR = 15 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/µs Page 4 1999-09-22 Preliminary data Power Dissipation Drain current BSP308 Ptot = f (TA) BSP308 ID = f (TA ) BSP308 1.9 5.5 W 1.6 1.4 A 4.5 4.0 Ptot ID °C 1.2 1.0 0.8 0.6 3.5 3.0 2.5 2.0 1.5 0.4 0.2 0.0 0 1.0 0.5 20 40 60 80 100 120 160 0.0 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T A = 25 °C 10 2 ZthJA = f(tp ) parameter : D = tp /T 10 2 /I D = BSP308 BSP308 A V D S n (o ) K/W tp = 160.0 µs 10 1 RD S 10 1 1 ms 10 0 10 ms Z thJA 10 0 D = 0.50 0.20 0.10 ID 10 -1 DC 10 -1 single pulse 0.05 0.02 0.01 10 -2 -1 10 10 0 10 1 V 10 2 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 5 tp 1999-09-22 Preliminary data Typ. output characteristics BSP308 Typ. drain-source-on-resistance I D = f (VDS) parameter: tp = 80 µs BSP308 RDS(on) = f (ID ) parameter: VGS BSP308 12 Ptot = 1.80W VGS [V] a 2.0 b 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 0.16 b c A 10 9 8 i j l k g h fed Ω c d ID c e f g RDS(on) 0.12 0.10 7 6 5 4 3 2 b h i j k l 0.08 0.06 d e f j i kg h l b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 5.5 6.0 j 7.0 k l 8.0 10.0 0.04 0.02 VGS [V] = 1 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 A .


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