Document
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at • N-Channel .D w • Enhancement mode w • Logic Level
Features • dv/dt rated
SIPMOS ® Small-Signal-Transistor
Product Summary Drain source voltage Continuous drain current
h S a
ee
U 4 t
m o .c
Preliminary data
BSP308
VDS ID
4
30 0.05 4.7
V Ω A
Drain-Source on-state resistance RDS(on)
Type BSP308
Package SOT-223
Ordering Code Q67000-S4011
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current
T A = 25 °C T A = 70 °C
Pulsed drain current
T A = 25 °C
Reverse diode dv/dt
I S = 4.7 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C
Gate source voltage Power dissipation
w
w
w
t a .D
S a
e h
ID
U 4 t e
.c
G
m o
2 1
3
VPS05163
Pin 1
Pin 2/4 D
PIN 3 S
Value 4.7 3.9
Unit A
ID puls
dv/dt
18.8 6 kV/µs
VGS Ptot Tj , Tstg
±20 1.8 -55...+150 55/150/56
V
T A = 25 °C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
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w
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.D
a
S a t
e e h
m o c . °C U 4 t
W
1999-09-22
Preliminary data
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. -
BSP308
Unit max. 25 110 70 K/W K/W
RthJS RthJA
-
Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 1.6 max. 2 µA 0.1 10 10 0.05 0.03 1 100 100 0.075 0.05 nA Ω Ω V Unit
V(BR)DSS VGS(th) IDSS
30 1.2
VGS = 0 V, I D = 250 µA
Gate threshold voltage, VGS = VDS I D = 20 µA Zero gate voltage drain current
VDS = 30 V, V GS = 0 V, Tj = 25 °C VDS = 30 V, V GS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS RDS(on) RDS(on)
-
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 4.5 V, I D = 3.9 A
Drain-Source on-state resistance
VGS = 10 V, I D = 4.7
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
1999-09-22
Preliminary data
Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Transconductance typ.
BSP308
Unit max.
gfs Ciss Coss Crss td(on)
6.1 -
8.8 400 160 70 16
500 200 90 24
S pF
VDS≥2*I D*RDS(on)max , ID = 3.9 A
Input capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Turn-on delay time ns
VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω
Rise time
tr
-
30
45
VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω
Turn-off delay time
td(off)
-
16
24
VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω
Fall time
tf
-
15
23
VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω
Page 3
1999-09-22
Preliminary data
Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Gate to source charge typ.
BSP308
Unit max.
Qgs Qgd Qg V(plateau)
-
1.9 5.4 14.5 3.1
2.9 8.1 22 -
nC
VDD = 24 V, ID = 4.7 A
Gate to drain charge
VDD = 24 V, ID = 4.7 A
Gate charge total
VDD = 24 V, ID = 4.7 A, VGS = 0 to 10 V
Gate plateau voltage V
VDD = 24 V , I D = 4.7 A
Parameter Reverse Diode Inverse diode continuous forward current
Symbol min.
Values typ. 0.84 38.4 22.3 max. 4.7 18.8 1.1 57.6 33.5
Unit
IS ISM VSD trr Qrr
-
A
T A = 25 °C
Inverse diode direct current,pulsed
T A = 25 °C
Inverse diode forward voltage V ns nC
VGS = 0 V, I F = 4.7 A
Reverse recovery time
VR = 15 V, IF=I S , di F/dt = 100 A/µs
Reverse recovery charge
VR = 15 V, IF=l S , diF/dt = 100 A/µs
Page 4
1999-09-22
Preliminary data
Power Dissipation Drain current
BSP308
Ptot = f (TA)
BSP308
ID = f (TA )
BSP308
1.9
5.5
W
1.6 1.4
A
4.5 4.0
Ptot
ID
°C
1.2 1.0 0.8 0.6
3.5 3.0 2.5 2.0 1.5
0.4 0.2 0.0 0
1.0 0.5 20 40 60 80 100 120 160 0.0 0 20 40 60 80 100 120
°C
160
TA
TA
Safe operating area
Transient thermal impedance
I D = f ( VDS )
parameter : D = 0 , T A = 25 °C
10
2
ZthJA = f(tp )
parameter : D = tp /T
10 2
/I D =
BSP308
BSP308
A
V
D S n (o )
K/W
tp = 160.0 µs
10 1
RD
S
10 1
1 ms
10 0
10 ms
Z thJA
10 0 D = 0.50 0.20 0.10
ID
10 -1 DC
10 -1 single pulse
0.05 0.02 0.01
10 -2 -1 10
10
0
10
1
V
10
2
10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10
s 10 4
VDS
Page 5
tp
1999-09-22
Preliminary data
Typ. output characteristics
BSP308
Typ. drain-source-on-resistance
I D = f (VDS)
parameter: tp = 80 µs
BSP308
RDS(on) = f (ID )
parameter: VGS
BSP308
12
Ptot = 1.80W
VGS [V] a 2.0
b 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0
0.16
b c
A
10 9 8
i j l k g h fed
Ω
c d
ID
c
e f g
RDS(on)
0.12
0.10
7 6 5 4 3 2
b
h i j k l
0.08
0.06
d e f j i kg h l
b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 5.5 6.0 j 7.0 k l 8.0 10.0
0.04 0.02 VGS [V] =
1
a
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
5.0
0.00 0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0 A
.