HiPerFAST IGBT
HiPerFASTTM IGBT
IXGH 28N30B IXGT 28N30B
VCES IC25 VCE(sat)typ tfi(typ)
= 300 V = 56 A = 2.1 V = 55 ns
Symbol VCES V...
Description
HiPerFASTTM IGBT
IXGH 28N30B IXGT 28N30B
VCES IC25 VCE(sat)typ tfi(typ)
= 300 V = 56 A = 2.1 V = 55 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 300 300 ±20 ±30 56 28 112 ICM = 56 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A W °C °C °C °C °C
TO-247 AD (IXGH)
G
C E
TO-268 (IXGT)
G E (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector
Features International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2.5 TJ = 25°C TJ = 125°C V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
5 200 1 ±100 2.1 2.4
Advantages High power density Suitable for surf...
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