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CGB240

TriQuint Semiconductor

2-Stage Bluetooth InGaP HBT Power Amplifier

CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: The CGB240 GaAs Power Amplifier MMIC has be...


TriQuint Semiconductor

CGB240

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Description
CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1). Its high power added efficiency and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 23 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications. For WLAN applications (IEEE802.11b) or applications serving both WLAN and Bluetooth, we recommend to use the CGB240B device. Applications: Bluetooth Class 1 Cordless Phones Home RF Features: Single voltage supply. Wide operating voltage range 2.0 - 5.5 V. POUT = 23 dBm at VC = 3.2 V. Overall power added efficiency (PAE) typically 50%. High PAE at low–power mode. Analog power control with four power steps. Straight-Forward Matching; Few external components. Package Outline: 1 5 SOP-10-2 TSMSOP-10 Pin Configuration: 1 & 2: 3: 4, 5, & 10: 6: 7: 8 & 9: 11 (Paddle): Vc1 RF In NC Vcntrl1 Vcntrl2 Vc2 GND For further information please visit www.triquint.com Rev. 1.6 October 20th, 2004 pg. 2/13 CGB 240 Datasheet Absolute Maximum Ratings: Parameter Supply voltage- CW ...




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