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CGB240B

TriQuint Semiconductor

2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MM...


TriQuint Semiconductor

CGB240B

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Description
CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth class 1 applications and thus can be used in dual-mode (Bluetooth/WLAN) applications, too. While providing an effective channel power of 22dBm, the ACPR is better than -33dB relative to the sinx/x spectral peak of an IEEE802.11b–modulated TX signal. Each CGB240B chip is individually tested for IP3, resulting in guaranteed ACPR performance. In a Bluetooth class 1 system, the CGB240B’s high power added efficiency (up to 50%) and single positive supply operation makes the device ideally suited for handheld applications. The CGB240B delivers 23 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50% in saturated mode. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications. Applications: WLAN IEEE 802.11a Bluetooth Class 1 Package Outline: 1 5 P-TSSOP-10-2 Features: Pout = +23dBm at 3.2 V ACPR / IP3 tested to be compliant with IEEE802.11b standard Fully compliant with Bluetooth requirements (du...




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