28F2000PPC MX28F2000P Datasheet

28F2000PPC Datasheet, PDF, Equivalent


Part Number

28F2000PPC

Description

MX28F2000P

Manufacture

MXIC

Total Page 30 Pages
Datasheet
Download 28F2000PPC Datasheet


28F2000PPC
FEATURES
• 262,144 bytes by 8-bit organization
• Fast access time: 70/90/120 ns
• Low power consumption
– 50mA maximum active current
– 100uA maximum standby current
• Programming and erasing voltage 12V ± 5%
• Command register architecture
– Byte Programming (15us typical)
– Auto chip erase 5 seconds typical
(including preprogramming time)
– Block Erase
• Optimized high density blocked architecture
– Four 4-KB blocks (Top)
– Fourteen 16-KB blocks
– Four 4-KB blocks (Bottom)
MX28F2000P
2M-BIT [256K x 8] CMOS FLASH MEMORY
• Auto Erase (chip & block) and Auto Program
– DATA polling
– Toggle bit
• 10,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1 to VCC+1V
• Advanced CMOS Flash memory technology
• Compatible with JEDEC-standard byte-wide 32-pin
EPROM pinouts
• Package type:
– 32-pin plastic DIP
– 32-pin PLCC
– 32-pin TSOP (Type 1)
GENERAL DESCRIPTION
The MX28F2000P is a 2-mega bit Flash memory or-
ganized as 256K bytes of 8 bits each. MXIC's Flash
memories offer the most cost-effective and reliable
read/write non-volatile random access memory. The
MX28F2000P is packaged in 32-pin PDIP, PLCC
and TSOP. It is designed to be reprogrammed and
erased in-system or in-standard EPROM program-
mers.
The standard MX28F2000P offers access times as
fast as 70 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate
bus contention, the MX28F2000P has separate chip
enable (CE) and output enable (OE ) controls.
MXIC's Flash memories augment EPROM function-
ality with in-circuit electrical erasure and
programming. The MX28F2000P uses a command
register to manage this functionality, while
maintaining a standard 32-pin pinout. The
command register allows for 100% TTL level control
inputs and fixed power supply levels during erase
and programming, while maintaining maximum
EPROM compatibility.
MXIC Flash technology reliably stores memory con-
tents even after 10,000 erase and program cycles.
The MXIC cell is designed to optimize the erase and
programming mechanisms. In addition, the combi-
nation of advanced tunnel oxide processing and low
internal electric fields for erase and programming
operations produces reliable cycling. The
MX28F2000P uses a 12.0V ± 5% VPP supply to
perform the Auto Program/Erase algorithms.
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to 100
milliamps on address and data pin from -1V to VCC
+ 1V.
P/N: PM0380
1 REV. 1.5, OCT 29, 1998

28F2000PPC
MX28F2000P Block Address and Block Structure
A17~A0
3FFFFH
3F000H
3EFFFH
3E000H
3DFFFH
3D000H
3CFFFH
3C000H
3BFFFH
38000H
37FFFH
34000H
33FFFH
30000H
2FFFFH
2C000H
2BFFFH
28000H
27FFFH
24000H
23FFFH
20000H
1FFFFH
1C000H
1BFFFH
18000H
17FFFH
14000H
13FFFH
10000H
0FFFFH
0C000H
0BFFFH
08000H
07FFFH
04000H
03FFFH
03000H
02FFFH
02000H
01FFFH
01000H
00FFFH
00000H
4-K byte
4-K byte
4-K byte
4-K byte
16-K byte
16-K byte
16-K byte
16-K byte
16-K byte
16-K byte
16-K byte
16-K byte
16-K byte
16-K byte
16-K byte
16-K byte
16-K byte
16-K byte
4-K byte
4-K byte
4-K byte
4-K byte
MX28F2000P
P/N: PM0380
REV. 1.5, OCT 29, 1998
2


Features FEATURES • 262,144 bytes by 8-bit orga nization • Fast access time: 70/90/12 0 ns • Low power consumption – 50mA maximum active current – 100uA maxim um standby current • Programming and erasing voltage 12V ± 5% • Command r egister architecture – Byte Programmi ng (15us typical) – Auto chip erase 5 seconds typical (including preprogramm ing time) – Block Erase • Optimized high density blocked architecture – Four 4-KB blocks (Top) – Fourteen 16- KB blocks – Four 4-KB blocks (Bottom) MX28F2000P 2M-BIT [256K x 8] CMOS FLA SH MEMORY • Auto Erase (chip & block) and Auto Program – DATA polling – Toggle bit • 10,000 minimum erase/pro gram cycles • Latch-up protected to 1 00mA from -1 to VCC+1V • Advanced CMO S Flash memory technology • Compatibl e with JEDEC-standard byte-wide 32-pin EPROM pinouts • Package type: – 32- pin plastic DIP – 32-pin PLCC – 32- pin TSOP (Type 1) GENERAL DESCRIPTION The MX28F2000P is a 2-mega bit Flash memory organized as 256K bytes of 8 bits each. MXIC's Flash memories offer th.
Keywords 28F2000PPC, datasheet, pdf, MXIC, MX28F2000P, 8F2000PPC, F2000PPC, 2000PPC, 28F2000PP, 28F2000P, 28F2000, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)