CD9014

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9014 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PC Tj, Tstg VALUE 50 50 5.0 100 625 -55 to +150 UNIT V V V mA mW deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 50 Collector -Emitter Voltage VCBO IC=100uA, IE=0 50 Collector -Base Voltage VEBO IE=100uA, IC=0 5.0 Emitter Base Voltage ICBO VCB=50V, IE=0 Collector Cut off Current IEBO VEB=5V, IC=0 Emitter Cut off Current hFE IC=1mA,VCE=5V 60 DC Current Gain Collector Emitter Saturation Voltage VCE(Sat) IC=100mA,IB=5mA VBE(Sat) IC=100mA,IB=5mA Emitter Base Saturation Voltage Dynamic Characteristics Cob VCB=10V,f=1MHz Output Capacitance ft VCE=5V,IC=10mA, 125 Transition Frequency f=100MHz NF VCE=5V, IC=200uA Noise Figure f=1KHz hFE CLASSIFICATION A : 60-150, B : 100-300, C : 200-600, D : 400-1000, D1 : 400-630, D2 : 570-840, D3 : 760-1000, E : >800 MAX 50 50 1000 0.30 1.0 3.50 4.0 UNIT V V V nA nA V V pF MHz dB Continental Device India Limited Data Sheet Page 1 of 3 TO-92 Plastic Package B TO-92 Transistors on Tape and Ammo Pack Amm o Pack Style M EC H AN IC AL D ATA Ad hesive Tape on To p Sid e P h A A1 (p) FE E D C arrier Strip ...