Ordering number:EN4785A
NPN Triple Diffused Planar Silicon Transistor
2SC5047
Ultrahigh-Definition CRT Display Horizon...
Ordering number:EN4785A
NPN Triple Diffused Planar Silicon
Transistor
2SC5047
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC5047]
20.0 3.3 5.0
26.0
2.0 3.4
2.0
1.0
20.7
0.6 1.2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
h t t p : / / w w w . D a t a S h e e t 4 U
5.45
5.45
Conditions
2.8
1
2
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL
Ratings 1600
. n e t /
Unit V V V A A W W
˚C ˚C
800 6 25 50 3.5 250 150 –55 to +150
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=800V, IE=0 VCE=1600V, RBE=0 800 1.0 5 1.5 Conditions Ratings min typ max 10 1.0 Unit µA mA V mA V V
VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 VCE(sat) IC=20A, IB=5A VBE(sat) IC=20A, IB=5A
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of rel...
