UPA679TB

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA679TB N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES 2.5 V drive available Low on-state resistance N-ch RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A) P-ch RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) Two MOS FET circuits in same size package as SC-70 PACKAGE DRAWING (Unit: mm) 0.2 -0 +0.1 0.15 -0.05 +0.1 1.25 ±0.1 2.1 ±0.1 6 5 4 0 to 0.1 ORDERING INFORMATION PART NUMBER PACKAGE SC-88 (SSP) 1 2 3 0.7 0.9 ±0.1 0.65 0.65 µ PA679TB Marking: YA 1.3 2.0 ±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 / −20 ±12 / m12 ±0.35 / m0.25 ±1.40 / m1.00 0.2 150 –55 to +150 V V A A W °C °C PIN CONNECTION (Top View) 6 5 4 Total Power Dissipation (2 units) Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 2500 mm x 1.1 mm 1. 2. 3. 4. 5. 6. 1 2 3 Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 Remark The...