512Kx32 3.3V SRAM MODULE
WS512K32BV-XXXE 512Kx32 3.3V SRAM MODULE
FEATURES
s Access Times of 15†, 17, 20ns s MIL-STD-883 Compliant Devices Availa...
Description
WS512K32BV-XXXE 512Kx32 3.3V SRAM MODULE
FEATURES
s Access Times of 15†, 17, 20ns s MIL-STD-883 Compliant Devices Available s Low Voltage Operation s Packaging 66-pin, PGA Type, 1.385 inch square Hermetic Ceramic HIP (Package 402) 68 lead, Hermetic CQFP (G2), 22mm (0.880 inch) square (Package 500). Designed to fit JEDEC 68 lead 0.990" CQFJ footprint s Organized as 512Kx32; User Configurable as 1Mx16 or 2Mx8 s Radiation Tolerant with Epitaxial Layer Die s s s s s Commercial, Industrial and Military Temperature Ranges 3.3 Volt Power Supply BiCMOS TTL Compatible Inputs and Outputs Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation s Weight WS512K32BV-XG2XE - 8 grams typical WS512K32NBV-XH2XE - 13 grams typical
* This data sheet describes a product under development, not fully characterized, and is subject to change without notice.
† This speed is Advanced information.
PRELIMINARY*
4
PIN CONFIGURATION FOR WS512K32NBV-XH2XE TOP VIEW
1 I/O8 I/O9 I/O10 A13 A14 A15 A16 A17 I/O0 I/O1 I/O2 11 22 12 WE2 CS2 GND I/O11 A10 A11 A12 VCC CS1 NC I/O3 33 23 I/O15 I/O14 I/O13 I/O12 OE A18 WE1 I/O7 I/O6 I/O5 I/O4 I/O24 I/O25 I/O26 A6 A7 NC A8 A9 I/O16 I/O17 I/O18 44 34 VCC CS4 WE4 I/O27 A3 A4 A5 WE3 CS3 GND I/O19 55 45 I/O31 I/O30 56
SRAM MODULES
PIN DESCRIPTION
I/O0-31 A0-18 WE1-4 CS1-4
I/O29 I/O28 A0 A1
Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected
OE VCC GND NC
BLOCK DIAGRAM
A2
WE1 CS 1 WE2 CS2 W...
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