03N60S5 SPP03N60S5 Datasheet

03N60S5 Datasheet, PDF, Equivalent


Part Number

03N60S5

Description

SPP03N60S5

Manufacture

INFINEON

Total Page 10 Pages
Datasheet
Download 03N60S5 Datasheet


03N60S5
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
SPP03N60S5
VDS
RDS(on)
ID
600 V
1.4
3.2 A
PG-TO220
2
P-TO220-3-1
123
Type
SPP03N60S5
Package
PG-TO220
Ordering Code
Q67040-S4184
Marking
03N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 2.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 3.2 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
3.2
2
5.7
100
0.2
3.2
±20
±30
38
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.7
Page 1
2009-11-26

03N60S5
SPP03N60S5
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s3)
Symbol
dv/dt
Value
20
Unit
V/ns
Symbol
RthJC
RthJA
RthJA
Tsold
min.
-
-
Values
typ. max.
- 3.3
- 62
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=3.2A
600
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
IDSS
ID=135µΑ, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
3.5
-
-
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VGS=20V, VDS=0V
VGS=10V, ID=2A,
Tj=25°C
Tj=150°C
-
-
-
Values
typ. max.
--
700 -
4.5 5.5
0.5 1
- 70
- 100
1.26 1.4
3.4 -
Unit
V
µA
nA
Rev. 2.7
Page 2
2009-11-26


Features Cool MOS™ Power Transistor Feature • New revolutionary high voltage technol ogy • Ultra low gate charge • Perio dic avalanche rated • Extreme dv/dt r ated • Ultra low effective capacitanc es • Improved transconductance SPP03 N60S5 VDS RDS(on) ID 600 V 1.4 Ω 3. 2 A PG-TO220 2 P-TO220-3-1 123 Type SPP03N60S5 Package PG-TO220 Ordering Code Q67040-S4184 Marking 03N60S5 Ma ximum Ratings Parameter Symbol Conti nuous drain current TC = 25 °C TC = 10 0 °C ID Pulsed drain current, tp lim ited by Tjmax ID puls Avalanche energ y, single pulse EAS ID = 2.4 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 3.2 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source v oltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25 C Operating and storage temperature P tot Tj , Tstg Value 3.2 2 5.7 100 0.2 3.2 ±20 ±30 38 -55... +150 Unit A mJ A V W °C Rev. 2.7 Page 1 2009-11-26 SPP03N60S5 Maximum Ratings Parameter Drain.
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