Document
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPP03N60S5
VDS RDS(on)
ID
600 V 1.4 Ω 3.2 A
PG-TO220
2
P-TO220-3-1
123
Type SPP03N60S5
Package PG-TO220
Ordering Code Q67040-S4184
Marking 03N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 2.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 3.2 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot Tj , Tstg
Value
3.2 2 5.7 100
0.2
3.2 ±20 ±30 38 -55... +150
Unit A
mJ
A V W °C
Rev. 2.7
Page 1
2009-11-26
SPP03N60S5
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s3)
Symbol dv/dt
Value 20
Unit V/ns
Symbol
RthJC RthJA RthJA
Tsold
min. -
Values typ. max. - 3.3 - 62
Unit K/W
- - 62 - 35 - - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage Drain-Source avalanche breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA V(BR)DS VGS=0V, ID=3.2A
600 -
Gate threshold voltage Zero gate voltage drain current
VGS(th) IDSS
ID=135µΑ, VGS=VDS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C
3.5
-
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VGS=20V, VDS=0V VGS=10V, ID=2A, Tj=25°C Tj=150°C
-
-
Values typ. max. -700 -
4.5 5.5
0.5 1 - 70 - 100
1.26 1.4 3.4 -
Unit V
µA
nA Ω
Rev. 2.7
Page 2
2009-11-26
SPP03N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Characteristics
Transconductance
gfs
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Ciss Coss Crss t d(on) tr t d(off) tf
VDS≥2*ID*RDS(on)max, ID=2A VGS=0V, VDS=25V, f=1MHz
VDD=350V, VGS=0/10V, ID=3.2A, RG=20Ω
-
-
Values typ. max.
1.8 -
420 150 3.6 35 25 40 15 22.5
Unit S pF ns
Gate Charge Characteristics
Gate to source charge
Qgs VDD=350V, ID=3.2A
Gate to drain charge Gate charge total
Qgd Qg
VDD=350V, ID=3.2A, VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=3.2A
- 3.5 - nC -7- 12.4 16
- 8 -V
1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow
Rev. 2.7
Page 3
2009-11-26
SPP03N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Conditions
min.
Inverse diode continuous forward current
IS TC=25°C
-
Inverse diode direct current, pulsed
ISM
-
Inverse diode forward voltage Reverse recovery time Reverse recovery charge
VSD trr Qrr
VGS=0V, IF=IS VR=350V, IF=IS , diF/dt=100A/µs
-
Values typ. max. - 3.2
- 5.7
1 1000 2.3
1.2 1700
-
Unit A
V ns µC
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
Value
typ. typ.
Thermal resistance
Thermal capacitance
Rth1 Rth2 Rth3 Rth4 Rth5 Rth6
0.054 0.103 0.178 0.757 0.682 0.202
K/W
Cth1 Cth2 Cth3 Cth4 Cth5 Cth6
0.00005232 0.0002034 0.0002963 0.0009103 0.002084
0.024
Unit Ws/K
Ptot (t)
Tj R th1
C th 1
C th 2
Rth,n Tcase External Heatsink
C th ,n
Tamb
Rev. 2.7
Page 4
2009-11-26
SPP03N60S5
1 Power dissipation Ptot = f (TC)
40 SPP03N60S5 W
32
2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25°C
10 1
A
ZthJC Ptot ID ID
28 10 0 24
20
16
10 -1
tp = 0.001 ms
12 tp = 0.01 ms
tp = 0.1 ms
8
tp = 1 ms DC
4
00 20 40 60 80 100 120 °C 160 TC
10
-2
10
0
10 1
10 2 V 10 3
VDS
3 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T
10 1 K/W
10 0
10 -1
4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS
10
A
8 20V 12V
7
6
5
4
3
10V
9V 8.5V
8V
10
-2
10
-5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
2 7.5V
7V 1 6.5V
00
5
10 15 V
25
VDS
Rev. 2.7
Page 5
2009-11-26
SPP03N60S5
5 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 2 A, VGS = 10 V
8 SPP03N60S5
Ω
6 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs
8
A
RDS(on) ID
66
55
44
33
2 98%
typ 1
2 1
0-60 -20 20 60 100
7 Typ. gate charge VGS = f (QGate) parameter: ID = 3.2 A pulsed
16 SPP03N60S5
V 0.2 VDS max
12 0.8 VDS max
°C 180.