DatasheetsPDF.com

03N60S5 Dataheets PDF



Part Number 03N60S5
Manufacturers INFINEON
Logo INFINEON
Description SPP03N60S5
Datasheet 03N60S5 Datasheet03N60S5 Datasheet (PDF)

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP03N60S5 VDS RDS(on) ID 600 V 1.4 Ω 3.2 A PG-TO220 2 P-TO220-3-1 123 Type SPP03N60S5 Package PG-TO220 Ordering Code Q67040-S4184 Marking 03N60S5 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current, tp limited by Tj.

  03N60S5   03N60S5



Document
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP03N60S5 VDS RDS(on) ID 600 V 1.4 Ω 3.2 A PG-TO220 2 P-TO220-3-1 123 Type SPP03N60S5 Package PG-TO220 Ordering Code Q67040-S4184 Marking 03N60S5 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 2.4 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 3.2 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value 3.2 2 5.7 100 0.2 3.2 ±20 ±30 38 -55... +150 Unit A mJ A V W °C Rev. 2.7 Page 1 2009-11-26 SPP03N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 3.2 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s3) Symbol dv/dt Value 20 Unit V/ns Symbol RthJC RthJA RthJA Tsold min. - Values typ. max. - 3.3 - 62 Unit K/W - - 62 - 35 - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage Drain-Source avalanche breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA V(BR)DS VGS=0V, ID=3.2A 600 - Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=135µΑ, VGS=VDS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 3.5 - Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) VGS=20V, VDS=0V VGS=10V, ID=2A, Tj=25°C Tj=150°C - - Values typ. max. -700 - 4.5 5.5 0.5 1 - 70 - 100 1.26 1.4 3.4 - Unit V µA nA Ω Rev. 2.7 Page 2 2009-11-26 SPP03N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions min. Characteristics Transconductance gfs Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss t d(on) tr t d(off) tf VDS≥2*ID*RDS(on)max, ID=2A VGS=0V, VDS=25V, f=1MHz VDD=350V, VGS=0/10V, ID=3.2A, RG=20Ω - - Values typ. max. 1.8 - 420 150 3.6 35 25 40 15 22.5 Unit S pF ns Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=3.2A Gate to drain charge Gate charge total Qgd Qg VDD=350V, ID=3.2A, VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=3.2A - 3.5 - nC -7- 12.4 16 - 8 -V 1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow Rev. 2.7 Page 3 2009-11-26 SPP03N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions min. Inverse diode continuous forward current IS TC=25°C - Inverse diode direct current, pulsed ISM - Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF=IS , diF/dt=100A/µs - Values typ. max. - 3.2 - 5.7 1 1000 2.3 1.2 1700 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. typ. Thermal resistance Thermal capacitance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.054 0.103 0.178 0.757 0.682 0.202 K/W Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00005232 0.0002034 0.0002963 0.0009103 0.002084 0.024 Unit Ws/K Ptot (t) Tj R th1 C th 1 C th 2 Rth,n Tcase External Heatsink C th ,n Tamb Rev. 2.7 Page 4 2009-11-26 SPP03N60S5 1 Power dissipation Ptot = f (TC) 40 SPP03N60S5 W 32 2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 1 A ZthJC Ptot ID ID 28 10 0 24 20 16 10 -1 tp = 0.001 ms 12 tp = 0.01 ms tp = 0.1 ms 8 tp = 1 ms DC 4 00 20 40 60 80 100 120 °C 160 TC 10 -2 10 0 10 1 10 2 V 10 3 VDS 3 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T 10 1 K/W 10 0 10 -1 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 10 A 8 20V 12V 7 6 5 4 3 10V 9V 8.5V 8V 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 2 7.5V 7V 1 6.5V 00 5 10 15 V 25 VDS Rev. 2.7 Page 5 2009-11-26 SPP03N60S5 5 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 2 A, VGS = 10 V 8 SPP03N60S5 Ω 6 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 8 A RDS(on) ID 66 55 44 33 2 98% typ 1 2 1 0-60 -20 20 60 100 7 Typ. gate charge VGS = f (QGate) parameter: ID = 3.2 A pulsed 16 SPP03N60S5 V 0.2 VDS max 12 0.8 VDS max °C 180.


EP8256 03N60S5 89C5122


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)