Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
SPP03N60S5
VDS RDS(on)
ID
600 V 1.4 Ω 3.2 A
PG-TO220
2
P-TO220-3-1
123
Type SPP03N60S5
Package PG-TO220
Ordering Code Q67040-S4184
Marking 03N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 2.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 3.2 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot Tj , Tstg
Value
3.2 2 5.7 100
0.2
3.2 ±20 ±30 38 -55... +150
Unit A
mJ
A V W °C
Rev. 2.7
Page 1
2009-11-26
SPP03N60S5
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s3)
Symbol dv/dt
Value 20
Unit V/ns
Symbol
RthJC RthJA RthJA
Tsold
min. -
Values typ. max. - 3.3 - 62
Unit K/W
- - 62 - 35 - - 260 °C
Electrical Characteristics, at Tj=25°C u...