SPN03N60C3

Rev. 2.0 SPN03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 0.7 SOT-223 4 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances V Ω A 3 2 1 VPS05163 Type Package Ordering Code SPN03N60C3 SOT-223 Q67040S4552 Marking 03N60C3 Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TA = 25°C Symbol ID Value 0.7 0.4 Unit A ID puls 3 3.2 ±20 ±30 1.8 -55... +150 W °C V Avalanche current, repetitive tAR limited by Tjmax IAR VGS VGS Ptot Tj , Tstg Operating and storage temperature Page 1 2004-03-01 Rev. 2.0 SPN03N60C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 3.2 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=135µΑ, VGS=V DS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJS RthJA - Values typ. 25 110 max. 70 Unit K/W Values typ. 700 3 0.5 1.26 3.8 10 max. 3.9 600 2.1 -...