BUZ905DP

MAGNA TEC 20.0 5.0 BUZ905DP BUZ906DP MECHANICAL DATA Dimensions in mm 3.3 Dia. P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2.0 2 3 2.0 1.0 HIGH SPEED SWITCHING P–CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING 1.2 0.6 2.8 3.4 ENHANCEMENT MODE INTEGRAL PROTECTION DIODE N–CHANNEL ALSO AVAILABLE AS BUZ900DP & BUZ901DP DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE 5.45 5.45 TO–3PBL Pin 1 – Gate Pin 2 – Source Case is Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ905DP -160V BUZ906DP -200V ±14V -16A -16A 250W –55 to 150°C 150°C 0.5°C/W Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95 MAGNA TEC Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage BUZ905DP BUZ906DP STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions VGS = 10V ID = -10mA VDS = 0 VDS = -10V VGD = 0 BUZ905DP BUZ906DP IG = ±100µA ID = -100mA ID = -16A VDS = -160V IDSX Drain – Source Cut–Off Current VGS = 10V BUZ905DP V...