2SC2721 TRANSISTOR Datasheet

2SC2721 Datasheet, PDF, Equivalent


Part Number

2SC2721

Description

NPN SILICON EPITAXIAL TRANSISTOR

Manufacture

NEC

Total Page 6 Pages
Datasheet
Download 2SC2721 Datasheet


2SC2721
DATA SHEET
SILICON TRANSISTOR
2SC2721
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES
• Complementary transistor with 2SA1154
• High PT in small dimension and high voltage
PT = 1 W, VCEO = 60 V
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)*
PT
Tj
Tstg
* PW 10 ms, duty cycle 50%
Ratings
60
60
5.0
0.7
1.0
1
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 60 V, IE = 0
Emitter cutoff current
IEBO VEB = 5.0 V, IC = 0
DC current gain
hFE1 VCE = 1.0 V, IC = 0.1 A *
DC current gain
hFE2 VCE = 1.0 V, IC = 0.5 A *
DC base voltage
VBE VCE = 6.0 V, IC = 10 mA
Collector saturation voltage VCE(sat) IC = 0.5 A, IB = 50 mA *
Base saturation voltage
VBE(sat) IC = 0.5 A, IB = 50 mA *
Output capacitance
Gain bandwidth product
Cob VCB = 6.0 V, IE = 0, f = 1.0 MHz
fT VCE = 6.0 V, IE = 10 mA
Turn-on time
ton Refer to the test circuit.
Storage temperature
tstg
Turn-off time
toff
* Pulse test PW 350 µs, duty cycle 2% per pulsed
MIN.
90
50
600
TYP.
200
150
635
0.12
0.90
13
110
60
600
650
MAX.
100
100
400
700
0.35
1.2
Unit
nA
nA
mV
V
V
pF
MHz
ns
ns
ns
hFE CLASSIFICATION
Marking
hFE1
MA
90 to 180
LA
135 to 270
KA
200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16149EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928

2SC2721
TYPICAL CHARACTERISTICS (Ta = 25°C)
2SC2721
2 Data Sheet D16149EJ1V0DS


Features DATA SHEET SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HI GH-FREQUENCY AMPLIFIERS AND MID-SPEED S WITCHING FEATURES • Complementary tr ansistor with 2SA1154 • High PT in sm all dimension and high voltage PT = 1 W , VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Colle ctor to base voltage Collector to emitt er voltage Emitter to base voltage Coll ector current (DC) Collector current (p ulse) Total power dissipation Junction temperature Storage temperature VCBO V CEO VEBO IC(DC) IC(pulse)* PT Tj Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Rat ings 60 60 5.0 0.7 1.0 1 150 −55 to + 150 Unit V V V A A W °C °C PACKAGE DRAWING (UNIT: mm) ELECTRICAL CHARACTE RISTICS (Ta = 25°C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = 60 V, IE = 0 Emitter cutof f current IEBO VEB = 5.0 V, IC = 0 DC current gain hFE1 VCE = 1.0 V, IC = 0 .1 A * DC current gain hFE2 VCE = 1.0 V, IC = 0.5 A * DC base voltage VBE VCE = 6.0 V, IC = 10 mA Collector sat.
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