DATA SHEET
SILICON TRANSISTOR
2SC2721
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWI...
DATA SHEET
SILICON
TRANSISTOR
2SC2721
NPN SILICON EPITAXIAL
TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES Complementary
transistor with 2SA1154 High PT in small dimension and high voltage
PT = 1 W, VCEO = 60 V
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC(DC) IC(pulse)* PT
Tj Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings 60 60 5.0 0.7 1.0 1 150
−55 to +150
Unit V V V A A W °C °C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 60 V, IE = 0
Emitter cutoff current
IEBO VEB = 5.0 V, IC = 0
DC current gain
hFE1 VCE = 1.0 V, IC = 0.1 A *
DC current gain
hFE2 VCE = 1.0 V, IC = 0.5 A *
DC base voltage
VBE VCE = 6.0 V, IC = 10 mA
Collector saturation voltage VCE(sat) IC = 0.5 A, IB = 50 mA *
Base saturation voltage
VBE(sat) IC = 0.5 A, IB = 50 mA *
Output capacitance Gain bandwidth product
Cob VCB = 6.0 V, IE = 0, f = 1.0 MHz fT VCE = 6.0 V, IE = −10 mA
Turn-on time
ton Refer to the test circuit.
Storage temperature
tstg
Turn-off time
toff
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
MIN.
90 50 600
TYP.
200 150 635 0.12 0.90 13 110 60 600 650
MAX. 100 100 400
700 0.35 1.2
Unit nA nA
mV V V pF MHz ns ns ns
hFE ...