2SK2642-01MR MOSFET Datasheet

2SK2642-01MR Datasheet, PDF, Equivalent


Part Number

2SK2642-01MR

Description

N-Channel Silicon Power MOSFET

Manufacture

Fuji Semiconductors

Total Page 4 Pages
Datasheet
Download 2SK2642-01MR Datasheet


2SK2642-01MR
2SK2642-01omMRN-CHANNEL SILICON POWER MOS-FET
t4U.cFeatures
eHigh speed switching
heLow on-resistance
SNo secondary breakdown
taLow driving power
aHigh voltage
.DVGS=±35V Guarantee
wwwAvalanche-proof
FUJI POWER MOS-FET
TO-220F15
2.54
Applications
Switching regulators
mUPS
oDC-DC converters
General purpose power amplifier
3. Source
Equivalent circuit schematic
.cMaximum ratings and characteristicAbsolute maximum ratings
U(Tc=25°C unless otherwise specified)
t4Item
Drain-source voltage
Continuous drain current
ePulsed drain current
Gate-source voltage
eMaximum Avalanche Energy
hMax. power dissipation
Operating and storage
Stemperature range
Symbol
VDS
ID
ID(puls]
VGS
EAV *1
PD
Tch
Tstg
Rating
500
±15
±60
±35
88.7
50
+150
-55 to +150
Unit
V
A
A
V
mJ
W
°C
°C
*1 L=0.72mH, Vcc=50V
Drain(D)
Gate(G)
Source(S)
taElectrical characteristics (Tc =25°C unless otherwise specified)
aItem
Drain-source breakdown voltaget
.DGate threshold voltage
Zero gate voltage drain current
wGate-source leakage current
Drain-source on-state resistance
Forward transcondutance
wInput capacitance
wOutput capacitance
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=500V
VGS=0V
VGS=±35V VDS=0V
ID=7.5A VGS=10V
ID=7.5A VDS=25V
VDS=25V
VGS=0V
Tch=25°C
Tch=125°C
Min. Typ. Max. Units
500 V
3.5 4.0
4.5 V
10 500
µA
0.2 1.0 mA
10 100
nA
0.44 0.55
4.5 9.0
S
1400 2100
250 380
pF
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item
Thermal resistance
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Symbol
Rth(ch-c)
Rth(ch-a)
f=1MHz
VCC=300V ID=15A
VGS=10V
RGS=10
L=100µH Tch=25°C
IF=2xID VGS=0V Tch=25°C
IF=ID VGS=0V
-di/dt=100A/µs Tch=25°C
Test Conditions
channel to case
channel to ambient
110 170
30 50
om110 170
.c90 140
55 90
ns
U15 A
t41.1 1.65 V
e500 ns
e8.0 µC
www.DataShMin. Typ.
Max. Units
2.50 °C/W
62.5 °C/W
1

2SK2642-01MR
FUJI POWER MOSFET
Characteristics
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25oC
40
VGS=20V
35
10V
30
8V
25
20
15
10
5
0
0
7V
6.5V
6V
5.5V
5V
5 10 15 20 25 30 35
VDS [V]
Typical transfer characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25oC
101
100
10-1
10-2
0 1 2 3 4 5 6 7 8 9 10
VGS [ V ]
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25oC
101
100
10-1 10-1
100
ID [A]
101
2SK2642-01MR
Drain-source on-state resistance
RDS(on)=f(Tch):ID=7.5A,VGS=10V
2.0
1.5
1.0 max.
typ.
0.5
0.0
-50
0 50
Tch [ oC]
100
150
Typical drain-source on-state resistance
RDS(on)=f(ID):80µs pulse test, Tc=25oC
4.0
VGS=
5V
3.5
5.5V
6V
6.5V
7V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5 10 15 20
ID [ A ]
25
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
6.0
5.0
max.
4.0
typ.
min.
3.0
2.0
1.0
0.0 -50
0 50 100
Tch [ oC ]
150
2


Features o c . U 4 Features t e High speed switch ing e h Low on-resistance S No secondar y breakdown apower t Low driving a High D voltage . V =±35V Guarantee w Avala nche-proof w w GS 2SK2642-01MR m FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220F15 2.54 Applications Switching regulators UPS DC-DC convert ers General purpose power amplifier Ma ximum ratings and characteristicAbsolut e maximum ratings (Tc=25°C unless othe rwise specified) Item Drain-source volt age Continuous drain current Pulsed dra in current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature rang e Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 500 ±15 ±60 ±35 88. 7 50 +150 -55 to +150 Unit V A A V mJ W °C °C Electrical characteristics (T c =25°C unless otherwise specified) It em Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage dr ain current Symbol V(BR)DSS VGS(th) IDS S Gate-source leakage current Drain-source on-state resistance Forward.
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