Power MOSFET. 2SK2642-01MR Datasheet

2SK2642-01MR MOSFET. Datasheet pdf. Equivalent


Fuji Semiconductors 2SK2642-01MR
2SK2642-01omMRN-CHANNEL SILICON POWER MOS-FET
t4U.cFeatures
eHigh speed switching
heLow on-resistance
SNo secondary breakdown
taLow driving power
aHigh voltage
.DVGS=±35V Guarantee
wwwAvalanche-proof
FUJI POWER MOS-FET
TO-220F15
2.54
Applications
Switching regulators
mUPS
oDC-DC converters
General purpose power amplifier
3. Source
Equivalent circuit schematic
.cMaximum ratings and characteristicAbsolute maximum ratings
U(Tc=25°C unless otherwise specified)
t4Item
Drain-source voltage
Continuous drain current
ePulsed drain current
Gate-source voltage
eMaximum Avalanche Energy
hMax. power dissipation
Operating and storage
Stemperature range
Symbol
VDS
ID
ID(puls]
VGS
EAV *1
PD
Tch
Tstg
Rating
500
±15
±60
±35
88.7
50
+150
-55 to +150
Unit
V
A
A
V
mJ
W
°C
°C
*1 L=0.72mH, Vcc=50V
Drain(D)
Gate(G)
Source(S)
taElectrical characteristics (Tc =25°C unless otherwise specified)
aItem
Drain-source breakdown voltaget
.DGate threshold voltage
Zero gate voltage drain current
wGate-source leakage current
Drain-source on-state resistance
Forward transcondutance
wInput capacitance
wOutput capacitance
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=500V
VGS=0V
VGS=±35V VDS=0V
ID=7.5A VGS=10V
ID=7.5A VDS=25V
VDS=25V
VGS=0V
Tch=25°C
Tch=125°C
Min. Typ. Max. Units
500 V
3.5 4.0
4.5 V
10 500
µA
0.2 1.0 mA
10 100
nA
0.44 0.55
4.5 9.0
S
1400 2100
250 380
pF
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item
Thermal resistance
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Symbol
Rth(ch-c)
Rth(ch-a)
f=1MHz
VCC=300V ID=15A
VGS=10V
RGS=10
L=100µH Tch=25°C
IF=2xID VGS=0V Tch=25°C
IF=ID VGS=0V
-di/dt=100A/µs Tch=25°C
Test Conditions
channel to case
channel to ambient
110 170
30 50
om110 170
.c90 140
55 90
ns
U15 A
t41.1 1.65 V
e500 ns
e8.0 µC
www.DataShMin. Typ.
Max. Units
2.50 °C/W
62.5 °C/W
1


2SK2642-01MR Datasheet
Recommendation 2SK2642-01MR Datasheet
Part 2SK2642-01MR
Description N-Channel Silicon Power MOSFET
Feature 2SK2642-01MR; o c . U 4 Features t e High speed switching e h Low on-resistance S No secondary breakdown apower t .
Manufacture Fuji Semiconductors
Datasheet
Download 2SK2642-01MR Datasheet




Fuji Semiconductors 2SK2642-01MR
FUJI POWER MOSFET
Characteristics
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25oC
40
VGS=20V
35
10V
30
8V
25
20
15
10
5
0
0
7V
6.5V
6V
5.5V
5V
5 10 15 20 25 30 35
VDS [V]
Typical transfer characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25oC
101
100
10-1
10-2
0 1 2 3 4 5 6 7 8 9 10
VGS [ V ]
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25oC
101
100
10-1 10-1
100
ID [A]
101
2SK2642-01MR
Drain-source on-state resistance
RDS(on)=f(Tch):ID=7.5A,VGS=10V
2.0
1.5
1.0 max.
typ.
0.5
0.0
-50
0 50
Tch [ oC]
100
150
Typical drain-source on-state resistance
RDS(on)=f(ID):80µs pulse test, Tc=25oC
4.0
VGS=
5V
3.5
5.5V
6V
6.5V
7V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5 10 15 20
ID [ A ]
25
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
6.0
5.0
max.
4.0
typ.
min.
3.0
2.0
1.0
0.0 -50
0 50 100
Tch [ oC ]
150
2



Fuji Semiconductors 2SK2642-01MR
FUJI POWER MOSFET
2SK2642-01MR
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
10n
1n
100p
Ciss
Coss
Crss
10p10-2
10-1
100
VDS [V]
101
102
Typical gate charge characteristic
VGS=f(Qg):ID=15A,Tc=25oC
400
Vcc=400V
350
300
40
Vcc=1205004VV00V35
30
250
250V
200
25
20
150
100 100V
15
10
50 5
00
0 20 40 60 80 100 120 140 160 180
Qg [nC]
Forward characteristic of reverse of diode
IF=f(VSD):80µs pules test,VGS=0V
101
Tch=25oC typ.
100
10-1
10-2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD [V]
Transient thermal impedande
Zthch=f(t) parameter:D=t/T
101
0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
0
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t [s]
Power Dissipation
PD=f(Tc)
70
60
50
40
30
20
10
0 0 50 100
Tc [ oC ]
Safe operating area
ID=f(VDS):D=0.01,Tc=25oC
102
150
101
DC
100
10-1
t=0.01µs
1µs
10µs
100µs
1ms
10ms
100ms
10-1200
101 102
VDS [V]
103
3







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