FLM5964-35F

FEATURES ・High Output Power: P1dB=45.5dBm(Typ.) ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM5964-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. w w w .D a t a S e e h U t4 . m o c FLM5964-35F C-Band Internally Matched FET ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25o C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Ts t g Tch RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25o C) Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Sym bol V DS IGF IGR ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P. Pow er Gain at 1dB G.C.P. Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion w w w .D Sym bol IDSS gm Vp V GSO P1d B G1d B Id s r ηad d ∆G IM3 t a S a Condition RG=10Ω RG=10Ω e h t e Rating 15 -5 115 -65 to +175 175 U 4 .c m o Unit V V W o C o C Unit V mA mA Lim it ≤ 10 ≤ 108 ≥ -23.2 Condition VDS=5V, VGS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=480mA IGS=-480uA VDS=10V f=5.9 - 6.4 GHz IDS(DC)=8.0A(typ.) Zs=ZL=50 ohm f=6.4 GHz ∆ f=10MHz , 2-tone Test Pout=35.0dBm(S.C.L.) Channel to Case 10V x IDS(...