Document
Bulletin I27103 rev. A 09/97
IRK.F82.. SERIES
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INT-A-pakä Power Modules
Features
Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved
81 A
Description
These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I T(AV) @ TC I T(RMS) I TSM @ 50Hz @ 60Hz I t
2
IRK.F82..
81 90 180 2200 2300 24.2 22.1 242
Units
A °C A A A KA 2s KA 2s KA 2√ s µs µs V
o
@ 50Hz @ 60Hz
I 2√ t tq t rr VDRM / V RRM TJ range range
10 and 15 2 up to 800 - 40 to 125
C
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1
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 IRK.F82.. 08
VRRM/VDRM, maximum repetitive peak reverse voltage V
400 800
VRSM , maximum nonrepetitive peak rev. voltage V
400 800
IRRM/I DRM max.
@ T J = 125°C
mA
30
Current Carrying Capacity
ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 90 160 200 150 135 90 50 80% VDRM 50 60 90 265 320 240 215 160 50
o
Frequency f
ITM 180 el
o
ITM 100µs
Units
250 290 260 235 190 50
400 475 400 355 275 50
2240 1070 370 235 50
3100 1550 550 355 50
A A A A A V V
80% VDRM 60 90
80% VDRM 60
A/µ s °C
22 Ω / 0.15 µF
22 Ω / 0.15 µF
22 Ω / 0.15 µF
On-state Conduction
Parameter
IT(AV) Maximum average on-state current @ Case temperature IT(RMS) Maximum RMS current ITSM Maximum peak, one-cycle, non-repetitive surge current
IRK.F82..
81 90 180 2200 2300 1850 1950
Units Conditions
A °C A A TC = 90°C, as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125°C 180° conduction, half sine wave
I2 t
Maximum I2 t for fusing
24.2 22.1 17.1 15.6
I2 √t
Maximum I2 √t for fusing
242 1.20 1.24 2.18 2.00 1.96 600 1000
KA 2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x I T(AV)), TJ = TJ max. mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x I T(AV)), TJ = TJ max. V mA mA Ipk = 350A, T J = T J max., tp = 10ms sine pulse TJ = 25°C, IT > 30 A TJ = 25°C, VA = 12V, Ra = 6 Ω, Ig = 1A
VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current
2
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IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Switching
Parameter
di/dt Maximum non-repetitive rate o.