Document
Bulletin I27091 rev.A 09/97
IRK.F112.. SERIES
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INT-A-pakä Power Modules
Features
Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved
112 A
Description
These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I T(AV) @ TC I T(RMS) I TSM @ 50Hz @ 60Hz I t
2
IRK.F112..
112 90 250 3090 3237 47.8 43.6 478 10 and 15 2 up to 800 - 40 to 125
Units
A °C A A A KA 2s KA 2s KA 2√ s µs µs V
o
@ 50Hz @ 60Hz
I 2√ t tq t rr VDRM / V RRM TJ range
C
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1
IRK.F112.. Series
Bulletin I27091 rev. A 09/97
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 08
VRRM/VDRM, maximum repetitive peak reverse voltage V
400 800
VRSM , maximum nonrepetitive peak rev. voltage V
400 800
IRRM/I DRM max.
@ T J = 125°C
mA
30
IRK.F112.. Series
Current Carrying Capacity
ITM 180oel 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 90 220 285 205 175 125 50 80% VDRM 50 60 90 220 285 205 170 120 50 180 el 350 425 350 295 230 50 550 695 550 448 337 50 80% VDRM 60 90
o
Frequency f
ITM 100µs 2060 1230 460 295 50
ITM
Units
2900 1785 552 448 50
A A A A A V V
80% VDRM 60
A/µ s °C
47 Ω / 0.22 µF
47 Ω / 0.22 µF
47 Ω / 0.22 µF
On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Maximum average on-state current @ Case temperature Maximum RMS current Maximum peak, one-cycle, non-repetitive surge current
IRK.F112..
112 90 250 3090 3237 2600 2720
Units Conditions
A °C A A TC = 90°C, as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125°C 180° conduction, half sine wave
I2t
Maximum I2 t for fusing
47.8 43.6 33.8 30.8
I2 √t
Maximum I2 √t for fusing
478 1.19 1.43 1.67 1.12 1.77 600 1000
KA2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. V mA mA Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse TJ = 25°C, IT > 30 A TJ = 25°C, VA = 12V, Ra = 6 Ω, Ig = 1A
VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current
2
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IRK.F112.. Series
Bulletin I27091 rev. A 09/97
Switching
Parameter
di/dt Maximum non-repetitive rate o.