1N60P Diode Datasheet

1N60P Datasheet, PDF, Equivalent


Part Number

1N60P

Description

Schottky Barrier Diode

Manufacture

Formosa MS

Total Page 2 Pages
Datasheet
Download 1N60P Datasheet


1N60P
FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability
2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25
Parameter
Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
Forward continuous current
tp 1 s
Ta=25
Storage temperature range
Type
1N60
1N60P
1N60
1N60P
1N60
1N60P
Symbol
VRRM
VRRM
IFSM
IFSM
IF
IF
Tstg
Value
40
45
150
500
30
50
-65~+125
Unit
V
V
mA
mA
mA
mA
Maximum Thermal Resistance
Tj=25
Parameter
Junction ambient
Test Conditions
on PC board 50mm 50mm 1.6mm
Symbol
RthJA
Value
250
Unit
K/W
www.formosams.com
Formosa MicroSemi CO., LTD.
Rev. 2, 22-Nov-2002
1/2

1N60P
FMS
1N60/1N60P
Electrical Characteristics
Tj=25
Parameter
Forward voltage
Test Conditions
IF=1mA
Reverse current
IF=30mA
IF=200mA
VR=15V
Junction capacitance
Reverse recovery time
VR=1V, f=1MHz
VR=10V, f=1MHz
IF=IR=1mA Irr=1mA RC=100
Type Symbol Min Typ Max Unit
1N60
1N60P
1N60
1N60P
1N60
1N60P
1N60
1N60P
VF
VF
VF
VF
IR
IR
CJ
CJ
trr
0.32
0.24
0.65
0.65
0.1
0.5
2.0
6.0
0.5
0.5
1.0
1.0
0.5
1.0
1.0
V
V
V
V
A
A
pF
pF
ns
Dimensions in mm
Standard Glass Case
JEDEC DO 35
www.formosams.com
Formosa MicroSemi CO., LTD.
Rev. 2, 22-Nov-2002
2/2


Features FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low rev erse current and low forward voltage A pplications Low current rectification a nd high speed switching Construction S ilicon epitaxial planar Absolute Maxim um Ratings Tj=25 Parameter Repetitive p eak reverse voltage Peak forward surge current Forward continuous current Stor age temperature range tp 1 s Ta=25 Test Conditions Type 1N60 1N60P 1N60 1N60P 1N60 1N60P Symbol VRRM VRRM IFSM IFSM I F IF Tstg Value 40 45 150 500 30 50 -65 ~+125 Unit V V mA mA mA mA Maximum The rmal Resistance Tj=25 Parameter Junctio n ambient Test Conditions on PC board 5 0mm 50mm 1.6mm Symbol RthJA Value 250 U nit K/W Formosa MicroSemi CO., LTD. ww w.formosams.com Rev. 2, 22-Nov-2002 1/2 FMS 1N60/1N60P Electrical Character istics Tj=25 Parameter Forward voltage Test Conditions IF=1mA IF=30mA IF=200mA Reverse current Junction capacitance R everse recovery time VR=15V VR=1V, f=1M Hz VR=10V, f=1MHz IF=IR=1mA Irr=1mA RC=100Ω Type 1N60 1N60P 1N6.
Keywords 1N60P, datasheet, pdf, Formosa MS, Schottky, Barrier, Diode, N60P, 60P, 0P, 1N60, 1N6, 1N, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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