Barrier Diode. 1N60 Datasheet

1N60 Diode. Datasheet pdf. Equivalent


Formosa MS 1N60
FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability
2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25
Parameter
Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
Forward continuous current
tp 1 s
Ta=25
Storage temperature range
Type
1N60
1N60P
1N60
1N60P
1N60
1N60P
Symbol
VRRM
VRRM
IFSM
IFSM
IF
IF
Tstg
Value
40
45
150
500
30
50
-65~+125
Unit
V
V
mA
mA
mA
mA
Maximum Thermal Resistance
Tj=25
Parameter
Junction ambient
Test Conditions
on PC board 50mm 50mm 1.6mm
Symbol
RthJA
Value
250
Unit
K/W
www.formosams.com
Formosa MicroSemi CO., LTD.
Rev. 2, 22-Nov-2002
1/2


1N60 Datasheet
Recommendation 1N60 Datasheet
Part 1N60
Description Schottky Barrier Diode
Feature 1N60; FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low .
Manufacture Formosa MS
Datasheet
Download 1N60 Datasheet




Formosa MS 1N60
FMS
1N60/1N60P
Electrical Characteristics
Tj=25
Parameter
Forward voltage
Test Conditions
IF=1mA
Reverse current
IF=30mA
IF=200mA
VR=15V
Junction capacitance
Reverse recovery time
VR=1V, f=1MHz
VR=10V, f=1MHz
IF=IR=1mA Irr=1mA RC=100
Type Symbol Min Typ Max Unit
1N60
1N60P
1N60
1N60P
1N60
1N60P
1N60
1N60P
VF
VF
VF
VF
IR
IR
CJ
CJ
trr
0.32
0.24
0.65
0.65
0.1
0.5
2.0
6.0
0.5
0.5
1.0
1.0
0.5
1.0
1.0
V
V
V
V
A
A
pF
pF
ns
Dimensions in mm
Standard Glass Case
JEDEC DO 35
www.formosams.com
Formosa MicroSemi CO., LTD.
Rev. 2, 22-Nov-2002
2/2







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