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ET188

Fuji Semiconductors

Darlington Independent Power Module

ET188 S a t e e h U 4 t .c TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON om FUJI POWER TRANSISTOR HIGH VOLTAGE,HIGH C...


Fuji Semiconductors

ET188

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ET188 S a t e e h U 4 t .c TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON om FUJI POWER TRANSISTOR HIGH VOLTAGE,HIGH CURRENT,HIGH SPEED SWITCHING Outline Drawings w High reliability Including free wheeling diode w High voltage w Features .D a Applications Switching regulators Motor controls High frequency Inverters General Purpose power amplifier Maximum ratings and characteristic Item Collector-Base voltage Collector-Emitter voltage Collector-Emitter voltage Emitterr-Base voltage Collector current Symbol VCBO VCEO VCEO(SUS) VEBO IC IC -IC IB IB PC Tj Tstg Rating 400 300 10 100 200 Absolute maximum ratings (Tc=25°C unless otherwise specified) Base current DC 1ms DC DC 1ms Collector power disspation Operating junction temperature Storage temperature Electrical characteristics (Tc =25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time w w w .D t a S a e h t e U 4 JEDEC EIAJ .c m o - Equivalent Circuit Schematic 6 12 600 +150 -40 to +125 Unit V V V V A A A A A W °C °C Symbol VCBO -VCEO VCEO(SUS) VEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) ton tstg tf Test Conditions ICBO = 1mA ICBO = mA IC = 1A IEBO = 200mA VCBO = 400V VEBO = 10V IC = 100A, VCE = 5V IC = 100A, IB = 1.0A IC = 100A,+ IB = 2.0A - IB = 2.0A, RL=2Ω PW=50...




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