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PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Feature...
www.DataSheet4U.com
PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
n-ch an nel
Benefits
Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGBC20KD2 and IRGBC20MD2 products For hints see design tip 97003
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, fo...