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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBD110DWT1/D
Dual Schottky Barrier Diodes
Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six–leaded package. The SOT–363 is ideal for low–power surface mount applications where board space is at a premium, such as portable products. Surface Mount Comparisons:
SOT–363 Area (mm2) Max Package PD (mW) Device Count 4.6 120 2 SOT–23 7.6 225 1
MBD110DWT1 MBD330DWT1 MBD770DWT1
Motorola Preferred Devices
6
5
4
1
2
3
CASE 419B–01, STYLE 6 SOT–363
Space Savings:
Package SOT–363 1
SOT–23
40%
2
SOT–23
70%
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage
MAXIMUM RATINGS
Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Symbol VR Value 7.0 30 70 120 – 55 to +125 – 55 to +150 Unit Vdc
Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range
PF TJ Tstg
mW °C °C
DEVICE MARKING
MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Motorola, Small–Signal Inc. 1996 Motorola Transistors, FETs and Diodes Device Data
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MBD110DWT1 MBD330DWT1 MBD770DWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 µA) MBD110DWT1 MBD330DWT1 MBD770DWT1 CT MBD110DWT1 CT MBD330DWT1 MBD770DWT1 IR MBD110DWT1 MBD330DWT1 MBD770DWT1 NF MBD110DWT1 VF MBD110DWT1 MBD330DWT1 MBD770DWT1 — — — — — 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 — 6.0 — Vdc — — — 0.02 13 9.0 0.25 200 200 — — 0.9 0.5 1.5 1.0 µA nAdc nAdc dB — 0.88 1.0 pF Symbol V(BR)R 7.0 30 70 10 — — — — — pF Min Typ Max Unit Volts
Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 3.0 V) (VR = 25 V) (VR = 35 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA)
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS MBD110DWT1
1.0 0.7 0.5 IR, REVERSE LEAKAGE (m A) VR = 3.0 Vdc 0.2 0.1 0.07 0.05 100
IF, FORWARD CURRENT (mA)
10 TA = 85°C TA = – 40°C
1.0 TA = 25°C MBD110DWT1
0.02 MBD110DWT1 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (°C) 120 130
0.1 0.3
0.4
0.5 0.6 VF, FORWARD VOLTAGE (VOLTS)
0.7
0.8
Figure 1. Reverse Leakage
Figure 2. Forward Voltage
1.0
11 10 NF, NOISE FIGURE (dB) LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5)
C, CAPACITANCE (pF)
0.9
9 8 7 6 5 4 3 MBD110DWT1 2 4.0 1 0.1 0.2
0.8
0.7
MBD110DWT1 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) 10
0.6
0
1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL OSCILLATOR
NOTES ON TESTING AND SPECIFICATIONS Note 1 – CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 – Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 – LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter).
UHF NOISE SOURCE H.P. 349A
DIODE IN TUNED MOUNT
NOISE FIGURE METER H.P. 342A
IF AMPLIFIER NF = 1.5 dB f = 30 MHz
Figure 5. Noise Figure Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS MBD330DWT1
2.8 CT, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 f = 1.0 MHz 500
t , MINORITY CARRIER LIFETIME (ps)
MBD330DWT1
MBD330DWT1 400 KRAKAUER METHOD 300
200
100
0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 10 20 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100
Figure 6. Total Capacitance
Figure 7. Minority Carrier Lifetime
10 MBD330DWT1 1.0 TA = 100°C TA = 75°C 0.1 TA = 25°C
100 MBD330DWT1 IF, FORWARD CURRENT (mA) TA = – 40°C 10 TA = 85°C
IR, REVERSE LEAKAGE (m A)
1.0 TA = 25°C
0.01
0.001 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30
0.1 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2
Figure 8. Reverse Leakage
Figure 9. Forward Voltage
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS MBD770DWT1
2.0 CT, .