MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBD101/D
Schottky Barrier Diodes
• Low Noise Figure — 6....
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBD101/D
Schottky Barrier Diodes
Low Noise Figure — 6.0 dB Typ @ 1.0 GHz
Designed primarily for UHF mixer applications but suitable also for use in detector and ultra–fast switching circuits. Supplied in an inexpensive plastic package for low–cost, high–volume consumer requirements. Also available in Surface Mount package. Very Low Capacitance — Less Than 1.0 pF @ Zero Volts High Forward Conductance — 0.5 Volts (Typ) @ IF = 10 mA
MBD101 MMBD101LT1
Motorola Preferred Devices
SILICON
SCHOTTKY BARRIER DIODES
2 CATHODE
1 ANODE
1 2
3 CATHODE
1 ANODE
CASE 182– 02, STYLE 1 (TO–226AC)
3
MAXIMUM RATINGS
MBD101 Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR PF 280 2.2 TJ Tstg +150 – 55 to +150 225 1.8 mW mW/°C °C °C MMBD101LT1 Value 7.0 Unit Volts CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB)
1 2
DEVICE MARKING
MMBD101LT1 = 4M
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Forward Voltage(1) (IF = 10 mAdc) Reverse Leakage (VR = 3.0 Vdc) Symbol V(BR)R CT VF IR Min 7.0 — — — Typ 10 0.88 0.5 0.02 Max — 1.0 0.6 0.25 Unit Volts pF Volts µAdc
NOTE: MMBD101LT1 is also available in bulk packaging. Use MMBD101L as the device title to order this device in bulk.
Preferred devices are Motorola recommended choices...
