STD8NS25

N-CHANNEL 250V - 0.38Ω - 8A DPAK MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE STD8NS25 s s s STD8NS25 VDSS 250 V RDS(on) < 0.45 Ω ID 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 8 5 32 80 0.64 5 209 –65 to 150 150 Unit V V V A A A W W/°C V/ns mJ °C °C ()Pulse width limited by safe operating area (1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj ≤TjMAX (2) Starting T j = 25°C, IAR = 50A, V DD=20 V July 2001 1/6 STD8NS25 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resis...