2310FX ST2310FX Datasheet

2310FX Datasheet, PDF, Equivalent


Part Number

2310FX

Description

ST2310FX

Manufacture

ST Microelectronics

Total Page 6 Pages
Datasheet
Download 2310FX Datasheet


2310FX
® ST2310FX
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s NEW SERIES, ENHANCED PERFORMANCE
s FULLY INSULATED PACKAGE (U.L.
www.DataSheet4U.coCmOMPLIANT) FOR EASY MOUNTING
s HIGH VOLTAGE CAPABILITY ( > 1500 V)
s HIGH SWITCHING SPEED
s TIGTHER hfe CONTROL
s IMPROVED RUGGEDNESS
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR
MONITORS 17" AND HIGH END TVS
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
ISOWATT218FX
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
Ptot
Visol
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Total Dissipation at TC = 25 oC
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
October 2003
Value
1500
600
7
12
25
7
65
2500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
oC
oC
1/6

2310FX
ST2310FX
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max 1.9 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V
TJ = 125 oC
IEBO Emitter Cut-off Current
www.DataSheet4U.com
(IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VEB = 7 V
IC = 100 mA
IC = 7 A
L = 25 mH
IB = 1.75 A
VBE(sat)Base-Emitter
Saturation Voltage
IC = 7 A
IB = 1.75 A
hFEDC Current Gain
IC = 1 A
IC = 7 A
IC = 7 A
VCE = 5 V
VCE = 1 V
VCE = 5 V
INDUCTIVE LOAD
IC = 6 A
ts Storage Time
IB(on) = 1 A
tf Fall Time
LBB(off) = 1.3 µH
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
fh = 64 KHz
VBE(off) = -2.5 V
(see figure 1)
Min. Typ.
600
25
5.5
6.5
2.3
0.16
Max.
1
2
1
3
1.1
9.5
3
0.35
Unit
mA
mA
mA
V
V
V
µs
µs
Safe Operating Area
Thermal Impedance
2/6


Features ® ST2310FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHA NCED PERFORMANCE FULLY INSULATED PACKAG E (U.L. COMPLIANT) FOR EASY MOUNTING ww w.DataSheet4U.com s HIGH VOLTAGE CAPABI LITY ( > 1500 V) s HIGH SWITCHING SPEED s TIGTHER hfe CONTROL s IMPROVED RUGGE DNESS s s s APPLICATIONS: HORIZONTAL DEFLECTION FOR MONITORS 17" AND HIGH EN D TVS DESCRIPTION The device is manufac tured using Diffused Collector technolo gy for more stable operation Vs base dr ive circuit variations resulting in ver y low worst case dissipation. ISOWATT21 8FX INTERNAL SCHEMATIC DIAGRAM ABSOLU TE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj P arameter Collector-Emitter Voltage (V B E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Coll ector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipati on at T C = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Te.
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