512KB and 1MB BurstRAM
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPC2104/D
Advance Information
256KB and 512KB BurstRAM™...
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPC2104/D
Advance Information
256KB and 512KB BurstRAM™ Secondary Cache Modules for PowerPC™ PReP/CHRP Platforms
The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchronous data RAMs. The MPC2104, MPC2105, and MPC2106 utilize synchronous BurstRAMs. The modules are configured as 32K x 72, 64K x 72, and 128K x 72 bits in a 182 (91 x 2) pin DIMM format. The MPC2104 uses four of Motorola’s 5 V 32K x 18; the MPC2105 uses four of the 5 V 64K x 18; the MPC2106 uses eight of the 5 V 64K x 18. For tag bits, a 5 V cache tag RAM configured as 16K x 12 for tag field plus 16K x 2 for valid and dirty status bits is used. Bursts can be initiated with the ADS signal. Subsequent burst addresses are generated internal to the BurstRAM by the CNTEN signal. Write cycles are internally self timed and are initiated by the rising edge of the clock (CLKx) inputs. Eight write enables are provided for byte write control. The MPC2107 utilizes asynchronous data RAMs. The module is configured as 32K x 64 in the same 182 pin DIMM format. Again, 5 V cache tag RAMs configured as 16K x 12 for tag field plus 16K x 2 for valid and dirty status bits are used. Burst capability is provided in that two burst add...
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