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2SD1719 Datasheet, Equivalent, type Transistor.Silicon NPN triple diffusion planar type Transistor Silicon NPN triple diffusion planar type Transistor |
| Part | 2SD1719 |
|---|---|
| Description | Silicon NPN triple diffusion planar type Transistor |
| Feature | Power Transistors
2SD1719
Silicon NPN t riple diffusion planar type
For power a mplification with high forward current transfer ratio ■ Features
• High fo rward current transfer ratio hFE which has satisfactory linearity • High emi tter-base voltage (Collector open) VEBO • N type package enabling direct sol dering of the radiating fin to the prin ted circuit board, etc. of small electr onic equipment. 10. 0±0. 3 1. 5±0. 1 Uni t: mm 8. 5±0. 2 6. 0±0. 2 3. 4±0. 3 1. 0±0 . 1 4. 4±0. 5 ■ Absolute Maximum Rati ngs TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitt er voltage (Base open) Emitter-b . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
| Part | 2SD1719 |
|---|---|
| Description | Silicon NPN triple diffusion planar type Transistor |
| Feature | Power Transistors
2SD1719
Silicon NPN t riple diffusion planar type
For power a mplification with high forward current transfer ratio ■ Features
• High fo rward current transfer ratio hFE which has satisfactory linearity • High emi tter-base voltage (Collector open) VEBO • N type package enabling direct sol dering of the radiating fin to the prin ted circuit board, etc. of small electr onic equipment. 10. 0±0. 3 1. 5±0. 1 Uni t: mm 8. 5±0. 2 6. 0±0. 2 3. 4±0. 3 1. 0±0 . 1 4. 4±0. 5 ■ Absolute Maximum Rati ngs TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitt er voltage (Base open) Emitter-b . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
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