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type Transistor. 2SD1719 Datasheet |
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Power Transistors
2SD1719
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer
Unit: mm
ratio
8.5±0.2
6.0±0.2
3.4±0.3
1.0±0.1
■ Features
• High forward current transfer ratio hFE which has satisfactory lin-
earity
• High emitter-base voltage (Collector open) VEBO
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
100
60
15
6
12
3
40
1.3
150
−55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0)
1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Strage time
Fall time
VCEO
ICBO
IEBO
hFE
VCE(sat)
fT
ton
tstg
tf
IC = 25 mA, IB = 0
VCB = 100 V, IE = 0
VEB = 15 V, IC = 0
VCE = 4 V, IC = 1 A
IC = 5 A, IB = 0.1 A
VCE = 12 V, IC = 0.5 A, f = 10 MHz
IC = 5 A
IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
60 V
100 µA
100 µA
300 2 000
0.5 V
30 MHz
0.3 µs
1.5 µs
0.6 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE 300 to 1200 800 to 2 000
Publication date: April 2003
SJD00212AED
1
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2SD1719
PC Ta
80
(1)TC=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
60 (PC=1.3W)
(1)
40
20
(2) (3)
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
6
TC=25˚C
5
IB=10mA
4
9mA
8mA
7mA
3 6mA
5mA
4mA
2
3mA
2mA
1
1mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
10
IC/IB=50
1
TC=100˚C
25˚C
–25˚C
0.1
0.01
0.1
1 10
Collector current IC (A)
VBE(sat) IC
10
IC/IB=50
1 TC=–25˚C
100˚C
25˚C
0.1
hFE IC
105
VCE=4V
104
TC=100˚C
103 25˚C
–25˚C
102
1000
100
10
1
fT IC
VCE=12V
f=10MHz
TC=25˚C
0.01
0.01
1 10
Collector current IC (A)
10
0.01
0.1 1
Collector current IC (A)
10
0.1
0.01
0.1 1
Collector current IC (A)
10
Cob VCB
104
IE=0
f=1MHz
TC=25˚C
103
102
10
ton, tstg, tf IC
100 Pulsed tw=1ms
Duty cycle=1%
IC/IB=50
(IB1=–IB2)
VCC=50V
10 TC=25˚C
tstg
1 tf
ton
0.1
Safe operation area
100 Non repetitive pulse
TC=25˚C
ICP
10
IC
t=1ms
t=10ms
1 t=300ms
0.1
1
0.1 1 10 100
Collector-base voltage VCB (V)
0.01
0
246
Collector current IC (A)
8
0.01
1
10 100 1000
Collector-emitter voltage VCE (V)
2 SJD00212AED
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Rth t
103 (1)Without heat sink
(2)With a 50×50×2mm Al heat sink
102 (1)
(2)
10
1
10−1
10−2
10−4
10−3
10−2
10−1
1
10 102 103 104
Time t (s)
2SD1719
SJD00212AED
3
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