SI4834DY

Si4834DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V ID (A) 7.5 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (v) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 2.0 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4834DY Si4834DY-T1 (with Tape and Reel) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 Schottky Diode G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 7.5 Steady State Unit V 5.7 4.6 30 A 0.9 1.1 0.7 - 55 to 150 W _C ID IDM IS PD TJ, Tstg 6.0 1.7 2.0 1.3 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS MOSFET Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71183 S-31062—Rev. B, 26-May-03 www.vishay.com Steady-State Steady-State RthJA RthJC Schottky Typ 53 93 35 Symbol Typ 52 93 35 Max 62.5 110 40 Max 62.5 110 40 Unit _C/W 1 Si4834DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA ...