MRF21125

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L applications. Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Output Power — 20 Watts Efficiency — 18% Gain — 13 dB IM3 — –43 dBc ACPR — –45 dBc 100% Tested under 2–carrier W–CDMA Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF21125 MRF21125S MRF21125SR3 2170 MHz, 125 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B–03, STYLE 1 (NI–880) (MRF21125) CASE 465C–02, STYLE 1 (NI–880S) (MRF21125S) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–S...