MRF21060SR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21060/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. Typical W - CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offset @ 4.096 MHz BW, 15 DTCH Output Power — 6.0 Watts Power Gain — 12.5 dB Drain Efficiency — 15% Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 2170 MHz, 60 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI - 780 MRF21060R3 CASE 465A - 06, STYLE 1 NI - 780S MRF21060SR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 180 0.98 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic T...