MRF21030R3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts Output Power — 3.5 Watts Power Gain — 14 dB Efficiency — 15% High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. MRF21030R3 MRF21030SR3 2.2 GHz, 30 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 NI–400 MRF21030R3 CASE 465F–03, STYLE 1 NI–400S MRF21030SR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 83.3 0.48 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic ...