MRF21010LR1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21010/D The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power — 2.1 Watts Power Gain — 13.5 dB Efficiency — 21% High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel. Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. 2170 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 360B - 05, STYLE 1 NI - 360 MRF21010LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF21010LSR1 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic T...