DS2016

DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES § § Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V Data retention voltage = 5.5V to 2.0V Fast 5V access time − DS2016 - 100 100 ns − DS2016 - 150 150 ns Reduced-speed 3V access time − DS2016 - 100 250 ns − DS2016 - 150 250 ns Operating temperature range of -40°C to +85°C Full static operation TTL compatible inputs and outputs over voltage range of 5.5V to 2.7 volts. Available in 24-pin DIP and 24-pin SOIC packages Suitable for both battery operated and battery backup applications PIN ASSIGNMENT A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC A8 A9 WE OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 § § § § § § § § § DS2016 24-Pin DIP (600-mil) DS2016R 24-Pin SOIC (300-mil) PIN DESCRIPTION A0 - A10 DQ0 - DQ7 CE WE OE VCC GND - Address Inputs - Data Input/Output - Chip Enable Input - Write Enable Input - Output Enable Input - Power Supply Input 2.7V - 5.5V - Ground DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE ) is used for device selection and can be used in order to achieve the mini...