STP30NE03L

® STP30NE03L STP30NE03LFP N - CHANNEL 30V - 0.028 Ω - 30A TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP30NE03L STP30NE03LF P s s s s V DSS 30 V 30 V R DS( on ) < 0.04 Ω < 0.04 Ω ID 30 A 17 A TYPICAL RDS(on) = 0.028 Ω 100% AVALANCHE TESTED LOW GATE CHARGE LOW THRESHOLD DRIVE 3 1 2 1 2 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value ST P30NE03L V DS V DGR V GS ID ID I DM ( ) P tot V ISO T s tg Tj June 1999 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature o o o Unit STP30NE03L FP 30 30 ± 20 V V V 17 12 68 25 0.17 2000 A A A W W/ oC V o o 30 21 120 70 0.47  -65 to 175 175 C C 1/9 () Pulse width limited by safe operating area STP30NE03L/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl T...