2SK3943

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3943 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3943-ZP PACKAGE TO-263 (MP-25ZP) FEATURES Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) Low Ciss: Ciss = 5800 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±82 ±328 104 1.5 150 −55 to +150 185 43 185 V V A A W W °C °C mJ A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy Note2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. Tch(peak) ≤ 150°C, RG = 25 Ω The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17188EJ1V0DS00 (1st edition) Date Published February 2005 NS CP(K) Printed in Japan 2005 2SK3943 ELECTRICAL C...