FLC317MG-4

FLC317MG-4 High Voltage - High Power GaAs FET FEATURES E High Output Power: P1dB=34.8dBm(Typ.) E High Gain: G1dB=9.5dB(Typ.) E High PAE: ηadd=37%(Typ.) E Proven Reliability E Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for general purpose application in the C-Band frequency range as it provides superior power,gain,and efficiency. EUD stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC) Item Symbol Rating Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS PTot T stg T ch 15 -5 15 -65 to +175 175 Unit V V W o C o C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC) Item Symbol Condition Limit DC Input Voltage Forward Gate Current Reverse Gate Current Operating channel temperature VDS IGF IGR Tch RG=100Ω RG=100Ω 10 <19.4 >-2.0 145 Unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Limit Item Symbol Condition Min. Typ. Max. Saturated Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Unit mA mS Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Thermal Resistance IDSS gm Vp VGSO P1dB G1dB η add Rth VDS=5V,VGS=0V VDS=5V,IDS=800mA VDS=5V,IDS=60mA IGS=-60uA V DS=10V f=4.2GHz IDS(DC)=0.6IDSS(Typ) Channel to Case -1.0 -5.0 33.5 8.5 - 1200 600 -2.0 34.8 9.5 37.0 8.0 1800 -3.5 10.0 V V ...