CD13001

An IS/ISO 9002 and IECQ Certified Manufacturer ABSOLUTE MAXIMUM RATING (Ta =25ºC ) DESCRIPTION SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage CEO VEBO Emitter Base Voltage IC Collector Current Continuous ICM Peak (1) m o Continental Device India Limited .c U 4 t NPN SILICON PLANAR EPITAXIAL TRANSISTOR e e h S a at .D w w w VALUE 500 400 9.0 0.5 1.5 900 - 55 to +150 IS/ISO 9002 Lic# QSC/L- 000019.2 CD13001 TO - 92 Plastic Package PC Collector Power Dissipation T , Operating and Storage Junction j Tstg Temperature Range (1) Pulse Test: Pulse Width = 5ms, Duty Cycle<10% ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Base Voltage SYMBOL VCBO VCEO VEBO ICBO ICEO IEBO TEST CONDITION IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=500V, IE = 0 VCE=400V, IB = 0 VEB=9V, IC=0 Collector Emitter Voltage Emitter Base Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Transition Frequency Fall Time Storage Time m o .c U 4 t e e h S a t a .D w w w MIN 500 400 9 TYP MAX 100 200 100 40 hFE* hFE VCE(sat) VBE(sat) fT tf ts A 10-15 VCE=20V, IC=20mA VCE=10V, IC=0.25mA IC=50mA, IB=10mA 10 5 0.5 1.2 IC=50mA, IB=10mA VCE=20V,IC=20mA,f=1MHz IC=50mA, IB1= -1B2=5mA VCC=45V B 15-20 C 20-25 8 0.3 1.5 D 25-30 E 30-35 CD 13001 A CD 13001 B CD 13001 C CD 13001 D CD 13001 E UNIT V V V A mW ºC UNIT V V V µA µA V V MHz µs hFE* Classifications Note: Pro...