STC403D Silicon Transistor Datasheet

STC403D Datasheet, PDF, Equivalent


Part Number

STC403D

Description

NPN Silicon Transistor

Manufacture

AUK

Total Page 3 Pages
Datasheet
Download STC403D Datasheet


STC403D
Semiconductor
Features
Power Transistor General Purpose application
Low saturation voltage
: VCE(SAT)=0.4V Max.
High Voltage : VCEO =60V Min.
Ordering Information
Type NO.
Marking
STC403D
STC403
Outline Dimensions
Package Code
D- PAK
STC403D
NPN Silicon Transistor
unit : mm
KST--D003-000
PIN Connections
1. Base
2. Collector
3. Emitter
1

STC403D
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation (Tc=25 )
Junction temperature
Storage temperature
Symbol
VC B O
VC E O
VE B O
IC
PC
Tj
Tstg
STC403D
Ratings
80
60
5
3
15
150
- 55~150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BVCEO IC=50mA, IB=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE * VCE=5V, IC=0.5A
Base-Emitter on voltage
VBE(ON) VCE=5V, IC=0.5A
Collector-Emitter saturation voltage VCE(sat) IC=2A, IB=0.2A
Transition frequency
fT VCB=5V, IC=0.5A
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
Switching
Time
Turn-on Time
Storage Time
Fall Time
Ton
Tstg
Tf
* HFE rank : 200~400 Only
Min. Typ. Max. Unit
60 -
-V
- - 50 µA
- - 50 µA
200 - 400 -
- 0.7
1
V
- 0.4
1
V
- 30
- MH
- 35 - pF
- 0.65
-
- 1.3
-
- 0.65
-
KST--D003-000
2


Features Semiconductor STC403D NPN Silicon Trans istor Features • Power Transistor G eneral Purpose application • Low satu ration voltage : VC E ( S A T )=0.4V Ma x. • High Voltage : VC E O =60V Min. Ordering Information Type NO. STC403D Marking STC403 Package Code D -PAK Out line Dimensions unit : mm PIN Connect ions 1. Base 2. Collector 3. Emitter K ST--D003-000 1 STC403D Absolute maxim um ratings Characteristic Collector-Bas e voltage Collector-Emitter voltage Emi tter-base voltage Collector current Col lector dissipation (Tc=25¡É) Junction temperature Storage temperature Symbo l VC B O VC E O VE B O IC PC Tj T stg Ratings 80 60 5 3 15 150 -55~150 Unit V V V A W °C °C Electrical Character istics Characteristic Collector-Emitter breakdown voltage Collector cut-off cu rrent Emitter cut-off current DC curren t gain Base-Emitter on voltage Collecto r-Emitter saturation voltage Transition frequency Collector output capacitance Turn-on Time Switching Time Storage Time Fall Time Symbol BVCEO ICBO IE.
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