STC403 Silicon Transistor Datasheet

STC403 Datasheet, PDF, Equivalent


Part Number

STC403

Description

NPN Silicon Transistor

Manufacture

AUK

Total Page 3 Pages
Datasheet
Download STC403 Datasheet


STC403
Semiconductor
Features
Power Transistor General Purpose application
Low saturation voltage
: VCE(SAT)=0.4V Typ.
High Voltage : VCEO=60V Min.
Ordering Information
Type NO.
Marking
STC403
STC403
Outline Dimensions
Package Code
TO-220F
STC403
NPN Silicon Transistor
unit : mm
KST-H001-001
PIN Connections
1. Base
2. Collector
3. Emitter
1

STC403
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation (Tc=25)
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
80
60
5
3
15
150
-55~150
STC403
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BVCEO IC=50mA, IB=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE *
VCE=5V, IC=0.5A
Base-Emitter on voltage
VBE(ON) VCE=5V, IC=0.5A
Collector-Emitter saturation voltage
VCE(sat) IC=2A, IB=0.2A
Transition frequency
fT VCB=5V, IC=0.5A
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
Switching
Time
Turn-on Time
Storage Time
Fall Time
* hFE rank : 200~400 Only
Ton
Tstg
Tf
Min. Typ. Max. Unit
60 -
-V
- - 50 µA
- - 50 µA
200 - 400 -
- 0.7 1
V
- 0.4 1
V
- 30 - MH
- 20 - pF
- 0.65 -
- 1.3 -
- 0.65 -
KST-H001-001
2


Features Semiconductor STC403 NPN Silicon Transi stor Features • Power Transistor Gen eral Purpose application • Low satura tion voltage : VCE(SAT)=0.4V Typ. • H igh Voltage : VCEO=60V Min. Ordering I nformation Type NO. STC403 Marking STC4 03 Package Code TO-220F Outline Dimens ions unit : mm PIN Connections 1. Ba se 2. Collector 3. Emitter KST-H001-00 1 1 STC403 Absolute maximum ratings C haracteristic Collector-Base voltage Co llector-Emitter voltage Emitter-base vo ltage Collector current Collector dissi pation (Tc=25℃) Junction temperature Storage temperature Symbol VCBO VCEO V EBO IC PC Tj Tstg Ratings 80 60 5 3 15 150 -55~150 Unit V V V A W °C °C E lectrical Characteristics Characteristi c Collector-Emitter breakdown voltage C ollector cut-off current Emitter cut-of f current DC current gain Base-Emitter on voltage Collector-Emitter saturation voltage Transition frequency Collector output capacitance Turn-on Time Switch ing Time Storage Time Fall Time Symbol BVCEO ICBO IEBO hFE * VBE(ON) VCE.
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