79C2040

79C2040 20 Megabit (512K x 40-Bit) EEPROM MCM Logic Diagram Memory FEATURES: 512k x 40-bit EEPROM MCM RAD-PAK® radiation-hardened against natural space radiation Total dose hardness: - >100 krad (Si) - Dependent upon orbit Excellent Single event effects - SELTH > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode High endurance - 10,000 cycles/byte (Page Programming Mode) - 10 year data retention Page Write Mode: 128 Dword Page High Speed: - 150 and 200 ns maximum access times Automatic programming - 10 ms automatic Page/Dword write Low power dissipation - 375 mW/MHz active current -3. 2 mW standby current DESCRIPTION: Maxwell Technologies’ 79C2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging technology, the 79C2040 is the first radiation-hardened 20 megabit MCM EEPROM for space application. The 79C2040 uses twenty 1 Megabit high speed CMOS die to yield a 20 megabit product. The 79C2040 is capable of in-system electrical byte and page programmability. It has a 128 word page programming function to make the erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79C2040, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and wri...