STS4PF20V

P-CHANNEL 20V - 0.090 Ω - 4A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET TYPE STS4PF20V s s s STS4PF20V VDSS 20 V RDS(on) < 0.11 Ω ( @ 4.5 V ) < 0.135 Ω ( @ 2.7 V ) ID 4A s TYPICAL RDS(on) = 0.090 Ω @ 4.5 V TYPICAL RDS(on) = 0.100 Ω @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOBILE PHONE APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 20 20 ± 12 4 2.5 16 2.5 Unit V V V A A A W () Pulse width limited by safe operating area. June 2002 . Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/8 STS4PF20V THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature storage temperature [ Max 50 150 -55 to 150 °C/W °C °C (*) When ...