STS4DPFS20L

P-CHANNEL 20V - 0.07Ω - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET VDSS 20 V SCHOTTKY IF(AV) 3A RDS(on) < 0.08 Ω VRRM 30 V ID 4A VF(MAX) 0.51 V STS4DPFS20L SO-8 DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 20 20 ± 16 4 3.4 16 2 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM dv/dt April 2002 Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL = 125°C δ = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1 kHz tp = 100 µs Value 30 20 3 75 1 1 10000 Unit V A A A A A V/µs 1/8 ()Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of Voltages and current has to be reversed STS4DPFS20L THERMAL DATA Rthj-amb Rthj-amb Tstg Tl (*)Ther...