STS4DNF60L

® STS4DNF60L N - CHANNEL 60V - 0.045Ω - 4A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS4DNF60L s s V DSS 60 V R DS(on) < 0.055 Ω ID 4A s TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique " Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGMENT IN PORTABLE/DESKTOP PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Single Operation Drain Current (continuous) at T c = 100 o C Single Operation Drain Current (pulsed) Total Dissipation at T c = 25 C Dual Operation Total Dissipation at T c = 25 o C Single Operation o o Value 60 60 ± 20 4 2.5 16 2 1.6 Unit V V V A A A W W IDM ( ) P tot () Pulse width limited by safe operating area December 1998 1/5 STS4DNF60L THERMAL DATA R thj-amb Tj T stg *Thermal Resistance Junction-ambient Single Operation Dual Operation Maximum Operating Junction Temperature Storage Temperature 78 62.5 150 -55 to 150 o o C/...