MCR16N

MCR16N Silicon Controlled t4 Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. Blocking Voltage to 800 Volts On–State Current Rating of 16 Amperes RMS High Surge Current Capability — 160 Amperes Rugged Economical TO–220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design High Immunity to dv/dt — 100 V/µsec Minimum at 125°C Device Marking: Logo, Device Type, e.g., MCR16N, Date Code Preferred Device U m o .c w w a D . w S a t e e h http://onsemi.com SCRs 16 AMPERES RMS 800 VOLT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR16N On-State RMS Current (180° Conduction Angles; TC = 80°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Symbol VDRM, VRRM 800 IT(RMS) ITSM 16 Value Unit Volts I2t Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range w w .D w TJ PGM t a S a 160 106 5.0 0.5 2.0 e h A A A °C °C t e U 4 A .c 2 m o G K 4 ...