FLU35ZM

FLU35ZM FEATURES ・High Output Power: P1dB=35.5dBm(typ.) ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Item DC Input Voltage Channel Temperature Forward Gate Current Reverse Gate Current Gate Resistance Symbol VDS VGS PT Tstg Tch Rating 15 -5 20.8 -55 to +150 175 Unit V V W o o C C RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Symbol VDS Tch Igsf Igsr Rg Condition Unit V o ≤10 ≤ 145 ≤19.4 ≥-2.0 100 C mA mA Ω ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB Rth Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=800mA VDS=5V, IDS=60mA IGS=-60uA VDS=10V f=2.0GHz IDS=0.6IDSS(Typ.) Min. -1.0 -5 34.5 10.5 Limit Typ. 1200 600 -2.0 35.5 11.5 5 Max. 1800 -3.5 6 o Unit mA mS V V dBm dB C /W Channel to ...