MRF166W

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166W/D The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Push–Pull Configuration Reduces Even Numbered Harmonics Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 40 Watts Gain = 14 dB Efficiency = 50% Typical Performance at 175 MHz, 28 Vdc Output Power = 40 Watts Gain = 17 dB Efficiency = 60% Excellent Thermal Stability, Ideally Suited for Class A Operation Facilitates Manual Gain Control, ALC and Modulation Techniques 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR Low Crss — 4.0 pF @ VDS = 28 Volts Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. MRF166W 40 W, 500 MHz TMOS BROADBAND RF POWER FET CASE 412–01, Style 1 1 3 5 4 FLANGE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–Gate Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 20 8.0 175 1.0 – 65 to +150 200 Unit Vdc Vdc Adc ADC Watts °C/W °C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case RθJC 1.0 °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless ...