MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF160/D
The RF MOSFET Line
Power Field Effect Transist...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF160/D
The RF MOSFET Line
Power Field Effect
Transistor
N–Channel Enhancement–Mode MOSFET
Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50% Excellent Thermal Stability, Ideally Suited for Class A Operation Facilitates Manual Gain Control, ALC and Modulation Techniques 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR Low Crss – 0.8 pF Typical at VDS = 28 Volts Designed primarily for wideband large–signal output and driver from 30–500 MHz.
MRF160
4.0 W, to 400 MHz MOSFET BROADBAND RF POWER FET
CASE 249–06, STYLE 3
D
G S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain–Gate Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current–Continuous Total Device Dissipation @ TC = 25°C Derate Above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 40 1.0 24 0.14 – 65 to +150 200 Unit Vdc Vdc Vdc ADC Watts W/°C °C °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case RθJC 7.2 °C/W NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 2
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1995
MRF160 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–S...